Qing-Tai Zhao, : rechercher sur Z-Library

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1

[IEEE ESSDERC 2016 - 46th European Solid-State Device Research Conference - Lausanne, Switzerland (2016.9.12-2016.9.15)] 2016 46th European Solid-State Device Research Conference (ESSDERC) - Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation

Horst, Fabian, Graef, Michael, Hosenfeld, Fabian, Farokhnejad, Atieh, Hain, Franziska, Luong, Gia Vinh, Zhao, Qing-Tai, Iniguez, Benjamin, Kloes, Alexander

Année:

2016

Langue:

english

Fichier:

PDF, 4.11 MB

english, 2016

2

Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs: C–V characteristics, mobility, and ON current

Anh-Tuan Pham, Qing-Tai Zhao, Christoph Jungemann, Bernd Meinerzhagen, Siegfried Mantl, Bart Soree, Geoffrey Pourtois

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 725 KB

english, 2011

3

Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

Stefan Habicht, Sebastian Feste, Qing-Tai Zhao, Dan Buca, Siegfried Mantl

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 934 KB

english, 2012

4

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Multi-gates SOI LDMOS for improved on-state performance

Xu, Dawei, Cheng, Xinhong, Yu, Yuehui, Wang, Zhongjian, Xia, Chao, Cao, Duo, Zhao, Qing-Tai, Liu, Linjie, Mantl, Siegfried

Année:

2014

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2014

5

Channeling study on damage in potassium titanyl phosphate induced by ion irradiation

Wang, Ke-Ming, Shi, Bo-Rong, Wang, Zhong-Lie, Liu, Xiang-Dong, Liu, Yao-Gang, Zhao, Qing-Tai

Journal:

Physical Review B

Année:

1994

Langue:

english

Fichier:

PDF, 332 KB

english, 1994

6

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

Zhao, Qing-Tai, Richter, Simon, Schulte-Braucks, Christian, Knoll, Lars, Blaeser, Sebastian, Luong, Gia Vinh, Trellenkamp, Stefan, Schafer, Anna, Tiedemann, Andreas, Hartmann, Jean-Michel, Bourdelle,

Journal:

IEEE Journal of the Electron Devices Society

Année:

2015

Langue:

english

Fichier:

PDF, 1.90 MB

english, 2015

7

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

Lopes, J. Marcelo, Durğun Özben, Eylem, Schnee, Michael, Luptak, Roman, Nichau, Alexander, Tiedemann, Andreas, Yu, Wenjie, Zhao, Qing-Tai, Besmehn, Astrid, Breuer, Uwe, Luysberg, Martina, Lenk, St.,

Année:

2011

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2011

8

Experimental demonstration of improved analog device performance of nanowire-TFETs

Schulte-Braucks, Christian, Richter, Simon, Knoll, Lars, Selmi, Luca, Zhao, Qing-Tai, Mantl, Siegfried

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 822 KB

english, 2015

9

Complementary strained Si GAA Nanowire TFET inverter with suppressed ambipolarity

Luong, Gia Vinh, Narimani, Keyvan, Tiedemann, Andreas, Bernardy, Patric, Trellenkamp, Stefan, Zhao, Qing-Tai, Mantl, Siegfried

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 890 KB

english, 2016

10

Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation

Wang, Yi-Ze, Liu, Chang, Cai, Jian-Hui, Liu, Qiang, Liu, Xin-Ke, Yu, Wen-Jie, Zhao, Qing-Tai

Journal:

Chinese Physics Letters

Année:

2017

Langue:

english

Fichier:

PDF, 946 KB

english, 2017

11

A novel gate-normal tunneling field-effect transistor with dual-metal gate

Glass, Stefan, Kato, Kimihiko, Kibkalo, Lidia, Hartmann, Jean-Michel, Takagi, Shinichi, Buca, Dan, Mantl, Siegfried, Zhao, Qing-Tai

Journal:

IEEE Journal of the Electron Devices Society

Année:

2018

Langue:

english

Fichier:

PDF, 3.33 MB

english, 2018

12

Two-dimensional distributions of Xe ions implanted in Si3N4 films

Ke-Ming Wang, Zhong-Lie Wang, Bo-Rong Shi, Bao-Dong Qu, Xiang-Dong Liu, Ji-Tian Liu, Qing-Tai Zhao

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 403 KB

english, 1993

13

Investigation of depth distributions of defects in Si created by high energy Ti ions

Ke-Ming Wang, Bo-Rong Shi, Shi-Jie Ma, Xiang-Dong Liu, Hong-Ying Zhai, Tian-Bing Xu, Pei-Ran Zhu, Qing-Tai Zhao

Journal:

Année:

1994

Langue:

english

Fichier:

PDF, 424 KB

english, 1994

14

Lateral straggling of Hg+ in both amorphized quartz crystal and Ni film by RBS

Ke-Ming Wang, Bo-Rong Shi, Qing-Tai Zhao, Yun-Tao Wang, Xiang-Dong Liu, Ji-Tian Liu, Xue-Lin Wang

Journal:

Physics Letters A

Année:

1990

Langue:

english

Fichier:

PDF, 269 KB

english, 1990

15

Range profiles of Xe ions at energies from 50 to 400 keV in potassium titanyl phosphate

Ke-Ming Wang, Bo-Rong Shi, Zhong-Lie Wang, Qing-Tai Zhao, Yun-Tao Wang, Xiang-Dong Liu, Ji-Tian Liu

Journal:

Physics Letters A

Année:

1990

Langue:

english

Fichier:

PDF, 387 KB

english, 1990

16

Damage profiles in silicon induced by 1.0 MeV Ti ions at tilted angle incidence

Ke-Ming Wang, Bo-Rong Shi, Xiang-Dong Liu, Tian-Bing Xu, Pei-Ran Zhu, Jun-Si Zhou, Qing-Tai Zhao

Journal:

Physics Letters A

Année:

1992

Langue:

english

Fichier:

PDF, 316 KB

english, 1992

17

Growth of ferroelectric (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 thin films by fulsed laser deposition

Meiya Li, Zhong-Lie Wang, Shoushan Fan, Qing-Tai Zhao, Guangcheng Xiong, Huanchu Chen, Zhiguo Liu

Journal:

Solid State Communications

Année:

1997

Langue:

english

Fichier:

PDF, 586 KB

english, 1997

18

Fabrication of Schottky barrier MOSFETs on SOI by a self-assembly CoSi2-patterning method

Qing-Tai Zhao, Patrick Kluth, Stephan Winnerl, Siegfried Mantl

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 154 KB

english, 2003

19

Influences of substrates and substrate temperatures on characteristics of epitaxial La0.5Sr0.5CoO3 thin films

Meiya Li, Zhong-Lie Wang, Shoushan Fan, Qing-Tai Zhao, Guangcheng Xiong

Journal:

Thin Solid Films

Année:

1998

Langue:

english

Fichier:

PDF, 555 KB

english, 1998

20

Lattice disorder in silicon induced by 2.0 MeV Cu+irradiation

Ke-Ming Wang, Bo-Rong Shi, Xiang-Dong Liu, Tian-Bing Xu, Pei-Ran Zhu, Jun-Si Zhu, Qing-Tai Zhao

Journal:

Applied Physics A: Materials Science & Processing

Année:

1992

Langue:

english

Fichier:

PDF, 311 KB

english, 1992

21

Range profiles of xenon in PVA

Ke-Ming Wang, Ji-Tian Liu, Bo-Rong Shi, Xiang-Dong Liu, Qing-Tai Zhao, Ke-Jun Yao

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1990

Langue:

english

Fichier:

PDF, 339 KB

english, 1990

22

Damage formation in Si(100) induced by MeV self-ion implantation

Zhao Qing-tai, Wang Zhohg-lie, Xu Tian-bing, Zhu Pei-ran, Zhou Jun-si, Liu Xiang-dong, Liu Ji-tian, Wang Ke-ming

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1993

Langue:

english

Fichier:

PDF, 399 KB

english, 1993

23

Damage accumulation and amorphization in GaAs by MeV Si+ ion implantation at different tilt angles

Zhao Qing-tai, Wang Zhong-lie, Xu Tian-bing, Zhu Pei-ran, Zhou Jun-si

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1994

Langue:

english

Fichier:

PDF, 481 KB

english, 1994

24

RBS studies of the lattice damage caused by 1 Me V Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

Xu Tian-bing, Zhu Pei-ran, Zhou Jun-si, Li Daiqing, Gong Baoan, Wan Ya, Mu Shanming, Zhao Qing-tai, Wang Zhong-lie

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1994

Langue:

english

Fichier:

PDF, 456 KB

english, 1994

25

Reduction of secondary defects in 50 keV P+-implanted Si(100) by MeV Si ion irradiation

Qing-Tai Zhao, Zhong-Lei Wang

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1996

Langue:

english

Fichier:

PDF, 376 KB

english, 1996

26

Ion beam defect engineering in semiconductors and optoelectric materials

Zhong-Lie Wang, Qing-Tai Zhao, Ke-Ming Wang, Bo-Rong Shi

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1996

Langue:

english

Fichier:

PDF, 1020 KB

english, 1996

27

Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface

Xi-Feng Qin, Zi-Wu Ji, Ming Chen, Xiu-Hong Liu, Xue-Lin Wang, Ke-Ming Wang, Qing-Tai Zhao, Gang Fu

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2012

Langue:

english

Fichier:

PDF, 396 KB

english, 2012

28

Effects of MeV Si ion irradiation on the properties of shallow P + N junctions

Zhong-Lie Wang, Qing-Tai Zhao, Meiya Li, Xinjun Gong

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1998

Langue:

english

Fichier:

PDF, 148 KB

english, 1998

29

Structural characteristics and the control of crystallographic orientation of CeO2 thin films prepared by laser ablation

Mei-Ya Li, Zhong-Lie Wang, Shou-Shan Fan, Qing-Tai Zhao, Guang-Cheng Xiong

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1998

Langue:

english

Fichier:

PDF, 133 KB

english, 1998

30

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated With a Full Replacement Gate Process

Özben, E.D., Lopes, J.M.J., Nichau, A., Lupták, R., Lenk, S., Besmehn, A., Bourdelle, K.K., Qing-Tai Zhao, Schubert, J., Mantl, S.

Journal:

IEEE Transactions on Electron Devices

Année:

2011

Langue:

english

Fichier:

PDF, 828 KB

english, 2011

31

AlGaN/GaN MISHEMTs With High-$kappa hbox{LaLuO}_{3}$ Gate Dielectric

Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou, Qi Zhou, Schnee, M., Qing-Tai Zhao, Schubert, J., Chen, K.J.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 403 KB

english, 2012

32

Characterization of high-Îº LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

Yang, Shu, Huang, Sen, Chen, Hongwei, Schnee, Michael, Zhao, Qing-Tai, Schubert, JuÌrgen, Chen, Kevin J.

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 940 KB

english, 2011

33

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

Knoll, Lars, Zhao, Qing-Tai, Nichau, Alexander, Trellenkamp, Stefan, Richter, Simon, Schafer, Anna, Esseni, David, Selmi, Luca, Bourdelle, Konstantin K., Mantl, Siegfried

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 848 KB

english, 2013

34

Fabrication and Characterization of Enhancement-Mode High-$\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs

Yang, Shu, Huang, Sen, Schnee, Michael, Zhao, Qing-Tai, Schubert, Jrgen, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 1.92 MB

english, 2013

35

Ultrathin epitaxial Ni-silicide contacts on (100) Si and SiGe: Structural and electrical investigations

Zhao, Qing-Tai, Knoll, Lars, Zhang, Bo, Buca, Dan, Hartmann, Jean-Michel, Mantl, Siegfried

Journal:

Microelectronic Engineering

Année:

2013

Langue:

english

Fichier:

PDF, 1.97 MB

english, 2013

36

Improved LDMOS performance with buried multi-finger gates

Xu, Dawei, Cheng, Xinhong, Yu, Yuehui, Wang, Zhongjian, Cao, Duo, Xia, Chao, Liu, Linjie, Trellenkamp, Stefan, Mantl, Siegfried, Zhao, Qing-Tai

Journal:

Microelectronic Engineering

Année:

2014

Langue:

english

Fichier:

PDF, 1.39 MB

english, 2014

37

Experimental Investigation on Alloy Scattering in sSi/${\rm Si}_{0.5}{\rm Ge}_{0.5}$/sSOI Quantum-Well p-MOSFET

Yu, Wenjie, Wu, Wangran, Zhang, Bo, Liu, Chang, Sun, Jiabao, Zhai, Dongyuan, Yu, Yuehui, Wang, Xi, Shi, Yi, Zhao, Yi, Zhao, Qing-Tai

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 762 KB

english, 2014

38

[IEEE 2014 14th International Workshop on Junction Technology (IWJT) - Shanghai, China (2014.5.18-2014.5.20)] 2014 International Workshop on Junction Technology (IWJT) - Ultrathin Ni silicide contacts on Si and SiGe formed with multi thin Ni/Al layers

Liu, Linjie, Knoll, Lars, Wirths, Stephan, Buca, Dan, Mussler, Gregor, Mantl, Siegfried, Zhao, Qing-Tai

Année:

2014

Langue:

english

Fichier:

PDF, 496 KB

english, 2014

39

[IEEE 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013) - Coventry (2013.3.19-2013.3.21)] 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) - Si based tunnel field effect transistors: Recent achievements

Mantl, S., Knoll, L., Schmidt, M., Richter, S., Nichau, A., Trellenkamp, S., Schafer, A., Wirths, S., Blaeser, S., Buca, D., Qing-Tai Zhao,

Année:

2013

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2013

40

[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Analysis of GeSn-SiGeSn hetero-tunnel FETs

Sant, Saurabh, Zhao, Qing-Tai, Buca, Dan, Mantl, Siegfried, Schenk, Andreas

Année:

2014

Langue:

english

Fichier:

PDF, 555 KB

english, 2014

41

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, Christoph, Emam, Mostafa, Sandow, Christian, Knoch, Joachim, Qing-Tai Zhao,, Raskin, Jean-Pierre, Mantl, Siegfried

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 278 KB

english, 2010

42

[IEEE ESSDERC 2014 - 44th European Solid State Device Research Conference - Venice Lido, Italy (2014.9.22-2014.9.26)] 2014 44th European Solid State Device Research Conference (ESSDERC) - Experimental demonstration of improved analog device performance in GAA-NW-TFETs

Schulte-Braucks, Christian, Richter, Simon, Knoll, Lars, Selmi, Luca, Zhao, Qing-Tai, Mantl, Siegfried

Année:

2014

Langue:

english

Fichier:

PDF, 2.51 MB

english, 2014

43

Depth distribution of Hg ions at energies from 50 to 400 keV implanted in potassium titanyl phosphate

Wang, Ke-Ming, Shi, Bo-Rong, Wang, Zhong-Lie, Zhao, Qing-Tai, Liu, Xiang-Dong, Liu, Yao-Gang

Journal:

Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 636 KB

english, 1990

44

Distributions of implanted Fe ions in quartz crystal and silicon

Wang, Ke-Ming, Shi, Bo-Rong, Guo, Hai-Yan, Liu, Ji-Tian, Zhao, Qing-Tai, Liu, Xiang-Dong, Wang, Yun-Tao

Journal:

Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 573 KB

english, 1990

45

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3

Xinhong Cheng,, Dawei He,, Zhaorui Song,, Yuehui Yu,, Qing-Tai Zhao,, DaShen Shen,

Année:

2009

Langue:

english

Fichier:

PDF, 751 KB

english, 2009

46

Lateral spread effects in the implantation of Ar+, Xe+, and Hg+ in Si3N4 films

Wang, Ke-Ming, Qu, Bao-Dong, Shi, Bo-Rong, Wang, Zhong-Lie, Liu, Xiang-Dong, Liu, Ji-Tian, Zhao, Qing-Tai

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 692 KB

english, 1992

47

Range profiles of implanted argon ions in polymers

Zhao, Qing-Tai, Wang, Ke-Ming, Liu, Ji-Tian, Liu, Xiang-Dong, Deng, Shu-Mei, Lin, Jing, Yao, Ke-Jun

Journal:

Radiation Effects and Defects in Solids

Année:

1994

Langue:

english

Fichier:

PDF, 374 KB

english, 1994

48

Damage profiles in silicon tilt angles bombarded by high energy Cu ions

Wang, Ke-Ming, Shi, Bo-Rong, Wang, Zhong-Lie, Liu, Xiang-Dong, Ma, Shi-Jie, Xu, Tian-Bing, Zhu, Pei-Ran, Zhao, Qing-Tai

Journal:

Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 779 KB

english, 1994

49

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Wang, Zhong-lie, Zhang, Bo-xu, Zhao, Qing-tai, Li, Qi, Liefting, J. R., Schreutelkamp, R. J., Saris, F. W.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1015 KB

english, 1992

50

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Liu, Linjie, Jin, Lei, Knoll, Lars, Wirths, Stephan, Nichau, Alexander, Buca, Dan, Mussler, Gregor, Holländer, Bernhard, Xu, Dawei, Feng Di, Zeng, Zhang, Miao, Zhao, Qing-Tai, Mantl, Siegfried

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 3.61 MB

english, 2013